On the Nature of the Interstitial Defect with EC −0.16 eV Level in Irradiated Silicon
- 16 February 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 93 (2) , K147-K149
- https://doi.org/10.1002/pssa.2210930249
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Defect production and lifetime control in electron and γ-irradiated siliconJournal of Applied Physics, 1982
- EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated siliconPhysical Review B, 1974