Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model
- 15 November 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (10) , 5909-5914
- https://doi.org/10.1063/1.363586
Abstract
No abstract availableThis publication has 42 references indexed in Scilit:
- Acceptance-probability-controlled simulated annealing: A method for modeling the optical constants of solidsPhysical Review E, 1995
- Consistent formula for the refractive index of AlxGa1−xAs below the band edgeJournal of Applied Physics, 1995
- Optical dispersion of AlxGa1−xAs at crystal growth temperatureJournal of Applied Physics, 1994
- Design of widely tunable semiconductor lasers using grating-assisted codirectional-coupler filtersIEEE Journal of Quantum Electronics, 1993
- Modeling the optical dielectric function of the alloy systemAsPhysical Review B, 1993
- Determination of accurate critical-point energies and linewidths from optical dataPhysical Review B, 1990
- Excitonic effects in the optical spectrum of GaAsPhysical Review B, 1990
- Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSbPhysical Review B, 1987
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Behavior of the Electronic Dielectric Constant in Covalent and Ionic MaterialsPhysical Review B, 1971