Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters
- 1 October 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (10) , 1089-1094
- https://doi.org/10.1007/bf02651986
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- I n s i t u cleaning of silicon substrate surfaces by remote plasma-excited hydrogenJournal of Vacuum Science & Technology B, 1989
- New Ordered Structure for the H-Saturated Si(100) Surface: The (3×1) PhasePhysical Review Letters, 1985