The energetics of {113} stacking fault formation in Si from supersaturated interstitials
- 1 January 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (1) , 19-21
- https://doi.org/10.1063/1.116741
Abstract
Using a Tersoff‐type empirical potential energy function, the free energy of formation for {113}‐type stacking faults in silicon has been calculated both as a function of stacking fault rod length and width at a variety of temperatures. A particular tetrahedral‐tetrahedral dimer has the lowest free energy of formation at 0 K and this type of stacking fault forms an assemblage of such dimers. The free energy of formation per interstitial in a ribbon fault decreases with ribbon width, ribbon length, and increase of temperature.Keywords
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