Plasmonic device in silicon CMOS
- 18 June 2009
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 45 (13) , 706-708
- https://doi.org/10.1049/el.2009.0839
Abstract
The first plasmonic device integrated in Si CMOS, a C-shaped nanoaperture photodetector with a small feature size of 40 nm is presented. The photocurrent polarisation dependence of the C aperture detector is direct evidence of an antenna effect in the blue wavelength range. In contrast, there is no evident polarisation dependence for the square aperture detector with the same physical area. The photocurrent density of a CMOS detector is enhanced three times with the C-shaped nanoaperture.Keywords
This publication has 4 references indexed in Scilit:
- Low capacitance CMOS silicon photodetectors for optical clock injectionApplied Physics A, 2009
- Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antennaNature Photonics, 2008
- C-shaped nanoaperture-enhanced germanium photodetectorOptics Letters, 2006
- Plasmonics: Merging Photonics and Electronics at Nanoscale DimensionsScience, 2006