Normal incidence infra-red absorption from intersub-band transitions in p -type GaInAs/AIInAs quantum wells
- 7 May 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (10) , 932-934
- https://doi.org/10.1049/el:19920590
Abstract
Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6–12 μm. The transition from the impurity bound state to the extended state was observed for the first time.Keywords
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