TiC as a diffusion barrier between Al and CoSi2
- 1 May 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 4 (3) , 637-640
- https://doi.org/10.1116/1.573861
Abstract
The stability of the reactively sputtered titanium carbide film sandwiched between cobalt disilicide and aluminum has been studied using Rutherford backscattering, Auger electron spectroscopy, x-ray diffraction, Nomarski optical and transmission electron microscopy. The titanium carbide film is an excellent diffusion barrier through heat treatments at temperatures up to 450 °C for an anneal time of 30 min. The barrier breaks down at 500 °C. Co2Al9 and Ti7Al5Si12 compounds were formed when annealed at 550 °C.Keywords
This publication has 0 references indexed in Scilit: