CW mm-wave GaAs TUNNETT diode
- 30 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (18) , 1540-1542
- https://doi.org/10.1049/el:19900989
Abstract
GaAs single-drift TUNNETT diodes have been grown by MBE. For the first time CW-output power has been achieved in the V and W-bands. The best performance achieved is 25 mW associated with a conversion efficiency of 2.8% at 70 GHz. Good agreement between experimental findings and theoretical predictions obtained by means of a drift-diffusion model is demonstrated.Keywords
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