1000 and 1500 volts planar devices using field plate and semi-resistive layers: design and fabrication
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Highly reliable high-voltage transistors by use of the SIPOS processIEEE Transactions on Electron Devices, 1976
- Surface breakdown in silicon planar diodes equipped with field plateSolid-State Electronics, 1972
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970