Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1x)yMo6S8 under High Pressure

Abstract
Pressure-induced high-temperature superconductivity is observed in semiconducting (SnxEu1x)yMo6S8, where 0<~x<~0.1 and y=1.0 and 1.2, having a carrier concentration ≃1019/cm3 at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure ≃7 kbar, superconductivity appears with dTcdP2 K/kbar. The maximum superconducting temperature (Tc10 K), reached at ∼ 12 kbar, represents the highest pressure-induced Tc in any semiconductor. For P>~13 kbar, the temperature-dependent resistance appears metallic.