Statistical worst-case MOS parameter extraction
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 211-215
- https://doi.org/10.1109/icmts.1989.39311
Abstract
A method is presented by which realistic worst-case parameter sets can be calculated. The method uses a statistical model from which all main MOS parameter values are calculated from four independent parameters. The statistical model, which is derived from a large number of measurements, is used to account for the correlations between the model parameters. The calculated worst-case parameter sets have been verified against measurements and have been shown to be accurate in predicting the worst-case current levels for both n-channel and p-channel devices.<>Keywords
This publication has 2 references indexed in Scilit:
- A Fully Analytical MOSFET Model Parameter Extraction ApproachPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Statistical modelling for integrated circuitsIEE Proceedings G (Electronic Circuits and Systems), 1982