H2O2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S)
- https://doi.org/10.1143/jjap.34.727
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH4OH/H2O2 MixturesJapanese Journal of Applied Physics, 1992
- Crystal-Originated Singularities on Si Wafer Surface after SC1 CleaningJapanese Journal of Applied Physics, 1990
- The Evolution of Silicon Wafer Cleaning TechnologyJournal of the Electrochemical Society, 1990
- Chemical oscillations and instabilities. 43. Oscillatory oxygen evolution during catalyzed disproportionation of hydrogen peroxideThe Journal of Physical Chemistry, 1981