Identification of oxide precipitates in annealed silicon crystals
- 1 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (3) , 225-227
- https://doi.org/10.1063/1.90323
Abstract
We have investigated the electron loss spectra of precipitates formed in annealed silicon crystals. The precipitates, as well as residue of the precipitates in precipitation sites, uniquely give rise to an energy loss at 532 eV. The energy loss is due to the excitation of oxygen 1s electrons. The precipitates are therefore identified as silicon oxide.Keywords
This publication has 2 references indexed in Scilit:
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976
- Impurity clustering effects on dislocation generation in siliconDiscussions of the Faraday Society, 1964