Coherent optical generation of nonequilibrium electrons studied via band-to-acceptor luminescence in GaAs
- 15 April 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (15) , 9876-9885
- https://doi.org/10.1103/physrevb.53.9876
Abstract
Nonequilibrium electrons generated by coherent optical excitation of GaAs are studied in a wide range of carrier density. The electron distribution is monitored via spectrally resolved band-to-acceptor luminescence after continuous-wave, picosecond, or femtosecond laser excitation. Our data demonstrate that the coherent coupling between the laser radiation and the interband polarization and its dephasing strongly influence the initial carrier distribution. The energetic width of carrier generation is broadened due to rapid phase-breaking scattering events during carrier generation. Theoretical results from a Monte Carlo solution of the semiconductor Bloch equations including on the same kinetic level coherent and incoherent phenomena show that the broadening of the electron distribution is introduced mainly in the generation process whereas the recombination of electrons with bound holes makes a minor contribution. The theoretical results are in quantitative agreement with the experimental data. © 1996 The American Physical Society.Keywords
This publication has 25 references indexed in Scilit:
- Ultrafast relaxation of photoexcited carriers: The role of coherence in the generation processPhysical Review Letters, 1994
- Coherent optical polarization of bulk GaAs studied by femtosecond photon-echo spectroscopyPhysical Review Letters, 1993
- Hot-electron luminescence: A comparison of GaAs and InPPhysical Review B, 1993
- Monte Carlo simulation of ultrafast processes in photoexcited semiconductors: Coherent and incoherent dynamicsPhysical Review B, 1992
- Analysis of coherent and incoherent phenomena in photoexcited semiconductors: A Monte Carlo approachPhysical Review Letters, 1992
- Carrier-carrier scattering in GaAs: Quantitative measurements from hot (e,) luminescencePhysical Review B, 1989
- Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley ScatteringPhysical Review Letters, 1989
- Femtosecond Photon Echoes from Band-to-Band Transitions in GaAsPhysical Review Letters, 1988
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985
- Hot electron photoluminescence in GaAs crystalsSolid State Communications, 1981