LO‐TO Mode Splittings and Dynamic Effective Charges of Oxygen in Reactively Sputtered SiO_x Determined by IR Spectroscopy

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1 June 1982

journal article
research article
Published by Wiley in Physica Status Solidi (b)

Vol. 111 (2) , K103-K106
https://doi.org/10.1002/pssb.2221110242

Abstract

No abstract available

This publication has 5 references indexed in Scilit:

Infrared Studies of Reactively Sputtered SiO_x Films in the Composition Range 0.2 ≦ x ≦ 1.9
Physica Status Solidi (b), 1982
Detection of LO and TO Phonons in Amorphous SiO₂ Films by Oblique Incidence of IR Light
Physica Status Solidi (b), 1981
Chemical bond and related properties of SiO2. VII. Structure and electronic properties of the SiOx region of Si–SiO2 interfaces
Physica Status Solidi (a), 1980
Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphous ${SiO}_{2}$ and ${GeO}_{2}$
Physical Review B, 1976
Infrared Absorption at Longitudinal Optic Frequency in Cubic Crystal Films
Physical Review B, 1963