Electron and ion beam effects in auger electron spectroscopy on insulating materials
- 1 January 1983
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 79 (1) , 291-303
- https://doi.org/10.1080/00337578308207412
Abstract
Some insulating films—like SiO2, P-doped SiO2, B-doped SiO2, K-silica glasses, SiaN4, and alumina—are of primary interest in silicon device technology. In this work the main problems concerning the electron and ion beam interactions with these materials when performing Auger analyses are outlined. A few examples of radiation effects are provided. Among these, electron stimulated desorption as well as ion beam induced adsorption and oxide reduction are treated in some detail. General trends in avoiding charging problems with Auger Electron Spectroscopy are provided.Keywords
This publication has 20 references indexed in Scilit:
- Chemical information from Auger electron spectroscopyJournal of Vacuum Science and Technology, 1981
- Electron beam damage in Auger electron spectroscopyApplications of Surface Science, 1981
- Characterization of electronic devices and materials by surface-sensitive analytical techniquesApplications of Surface Science, 1980
- Some aspects of Auger microanalysisSurface Science, 1979
- Observation of electron beam damage in thin-film SiO2 on Si with scanning Auger electron microscopeJournal of Applied Physics, 1979
- A study of the charging and dissociation of SiO2 Surfaces by AESSurface Science, 1977
- Electron-stimulated processes at solid surfacesJournal of Vacuum Science and Technology, 1976
- Elucidation of surface structure and bonding by photoelectron spectroscopy?Surface Science, 1975
- Electron stimulated desorption: Principles and recent developmentsSurface Science, 1975
- The temperature distributions in thin foil and semi-infinite targets bombarded by an electron beamBritish Journal of Applied Physics, 1964