center in GaAs
- 15 April 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (12) , 7102-7104
- https://doi.org/10.1103/physrevb.37.7102
Abstract
The species-dependent binding energy in GaAs is calculated variationally with the use of a Chandrasekhar-type trial function. The central-cell correction is introduced through a model potential. The possibility of extending the present approach to the center in silicon is discussed.
Keywords
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