Substitutional Doping of Vacuum-Evaporated Amorphous Silicon by Ion Implantation
- 16 January 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 69 (1) , K117-K120
- https://doi.org/10.1002/pssa.2210690170
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Coordination of Arsenic Impurities in Amorphous Silicon-Hydrogen AlloysPhysical Review Letters, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- High dose effects in ion implantationRadiation Effects, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964