Interface structure of selectively oxidized AlAs/GaAs

• 29 July 1996
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 69  (5) , 659-661
• https://doi.org/10.1063/1.117797

Abstract

Keywords

• GALLIUM ARSENIDE
• HIGH RESOLUTION
• CROSS SECTION
• TRANSMISSION ELECTRON MICROSCOPY