Selective area epitaxy of GaN for electron field emission devices
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 340-343
- https://doi.org/10.1016/s0022-0248(96)00620-3
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaNJournal of Electronic Materials, 1995
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994