Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control
- 1 October 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (10A) , L1809-1811
- https://doi.org/10.1143/jjap.28.l1809
Abstract
Thin films of Bi2(Sr, Ca)3Cu2O y have been prepared in situ by a molecular beam epitaxy technique in an ozone atmosphere of 4×10-4 Pa. The molecular beams were shutter controlled and films were deposited layer by layer. In situ reflection high energy electron diffraction (RHEED) showed the formation of the perovskite-related structure even at the initial deposition (one unit cell). The resistance of one of the films became zero at 30 K without heat treatment in oxygen.Keywords
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