Effects of channel geometries on FET output conductance in saturation
- 1 September 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (9) , 353-356
- https://doi.org/10.1109/EDL.1984.25944
Abstract
This work presents an experimental and theoretical study of the effects of nonrectangular channel geometries on FET electrical characteristics. In particular it is shown that substantial variations of the channel width in vicinity of the drain have significant consequences on the output conductance in saturation. It is, consequently, suggested that the channel geometry can be considered as a further relevant design parameter, to be used in controlling excessive output conductance.Keywords
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