Integrated In _0.53 Ga _0.47 As p-i-n f.e.t. photoreceiver

9 May 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (10) , 353-355
https://doi.org/10.1049/el:19800252

Abstract

The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In_0.53Ga_0.47As grown lattice matched to an InP substrate is reported.

Keywords

INP
INTEGRATED INGAAS P-I-N FET PHOTORECEIVER

Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiver

Abstract

Keywords

Integrated In _0.53 Ga _0.47 As p-i-n f.e.t. photoreceiver