A formula describing the temperature dependence of surface tension for some semiconductors melts
- 1 August 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 141 (3-4) , 451-454
- https://doi.org/10.1016/0022-0248(94)90251-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Wetting of III–V melts on crucible materialsJournal of Crystal Growth, 1993
- Experimental study of the surface tension of molten GaAs and its temperature dependence under controlled As-vapor pressureJournal of Crystal Growth, 1991
- Surface tension of GaAs meltCrystal Research and Technology, 1990
- Monte Carlo study of liquid GaAs: Bulk and surface propertiesPhysical Review B, 1990
- Surface tension and contact angle of molten semiconductor compoundsJournal of Crystal Growth, 1990
- Growth of Single Crystal InSb by Floating Zone MethodJournal of the Japan Institute of Metals and Materials, 1990
- Monte Carlo studies of liquid semiconductor surfaces: Si and GePhysical Review B, 1988
- The surface tension of liquid siliconJournal of Crystal Growth, 1984
- Surface tension of the molten stoichiometric InPCrystal Research and Technology, 1977