GaN-Based White-Light-Emitting Diodes Fabricated with a Mixture of Ba3MgSi2O8:Eu2+ and Sr2SiO4:Eu2+ Phosphors
- 1 March 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (3R) , 989
- https://doi.org/10.1143/jjap.43.989
Abstract
The photoluminescence (PL) spectra of Ba3MgSi2O8:Eu2+ show one peak at 442 nm and two unresolved peaks at 505 nm. The 442 nm peak is attributed to the 4f→5d transition of the Eu2+ ion doped in the Ba2+(I) site with a weak crystal field, while the 505 nm peak originates from Eu2+ ions on the Ba2+(II) or the Ba2+(III) site with a strong crystal field. The PL spectra of the Sr2SiO4:Eu2+ show two emission peaks at 470 nm and 560 nm. The emission intensity at 470 nm decreases with increasing Eu2+ concentration, while that at 560 nm increases. This can be understood by considering the energy transfer from the 470 nm band to the 560 nm band through multipolar interaction. The GaN-based white-light-emitting diode (LED) fabricated using a mixture of Ba3MgSi2O8:Eu2+ and Sr2SiO4:Eu2+ phosphors has a broad-band spectrum, higher color rendering index and higher color stability against forward bias currents than Y3Al5O12:Ce3+-based white-LEDs.Keywords
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