Molecular beam epitaxy and characterization of heterostructures for magnetic sensing applications
- 1 April 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (4) , 428-432
- https://doi.org/10.1088/0268-1242/13/4/013
Abstract
Quantum well structures of high quality were grown by molecular beam epitaxy. The structural and electrical quality was characterized by x-ray diffractometry, Raman spectroscopy and Hall transport measurements. When an optimized buffer layer was used on a GaAs substrate, electron mobilities of at 300 K and at 20 K were routinely achieved for undoped structures. These excellent transport properties were utilized in a sensitive magnetoresistive sensor.Keywords
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