Injected Light Emission of Silicon Carbide Crystals

Recombination of carriers injected through $P-N$ boundaries in silicon carbide crystals may lead to light emission ("injected light emission"). This light emission was investigated as a function of temperature and of current through the crystal by use of a photomultiplier. The emission spectrum extends from 4500A to 6500A at room temperature and is found to be nearly independent of current from 0.1 ma to 50 ma. The light intensity increases approximately proportionally to current (efficiency about ${10}^{-6\mathrm{}}$ quanta per electron at room temperature for a particular crystal).