Polarisation-dependent optical gain in ridge-waveguide laser diodes

3 August 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (16) , 1017-1018
https://doi.org/10.1049/el:19890680

Abstract

The polarisation dependence of the optical gain in quasi-index-guided, λ = 1.3 μm, GaInAsP/InP, metal-clad, ridge-waveguide laser diodes is demonstrated. It is shown experimentally that, depending on the lateral waveguiding, either the TE or the TM-polarised mode is favoured. By appropriate design of the laser structure, almost polarisation-independent internal optical gain has been experimentally achieved.

Keywords

III-V SEMICONDUCTORS
1.3 MICRON
OPTICAL GAIN
TM-POLARISED MODE
LATERAL WAVEGUIDING
TE POLARISED MODE
GAINASP-INP
QUASI-INDEX-GUIDED
OPTICAL COMMUNICATIONS LIGHT SOURCE
QUASIINDEX GUIDED STRUCTURE
POLARISATION-INDEPENDENT INTERNAL OPTICAL GAIN
RIDGE-WAVEGUIDE LASER DIODES
METAL-CLAD
SEMICONDUCTOR LASERS
POLARISATION DEPENDENCE

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