Radio frequency plasma etching of Si/SiO2 by Cl2/O2: Improvements resulting from the time modulation of the processing gases
- 1 May 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 9 (3) , 816-819
- https://doi.org/10.1116/1.577321
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: