Effects of self-heating on planar heterostructure barrier varactor diodes
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (11) , 2298-2303
- https://doi.org/10.1109/16.726644
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- High efficiency submillimeter frequency multipliersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high power 270 GHz frequency tripler featuring a Schottky diode parallel pairPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactorsJournal of Applied Physics, 1997
- Planar multibarrier 80/240-GHz heterostructure barrier varactor triplersIEEE Transactions on Microwave Theory and Techniques, 1997
- GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performanceIEEE Transactions on Microwave Theory and Techniques, 1994
- Cooled Schottky varactor frequency multipliers at submillimeter wavelengthsIEEE Transactions on Microwave Theory and Techniques, 1993
- A 200 GHz tripler using a single barrier varactorIEEE Transactions on Microwave Theory and Techniques, 1993
- Current saturation in submillimeter-wave varactorsIEEE Transactions on Microwave Theory and Techniques, 1992
- A High Efficiency Frequency Tripler for 230 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970