Incorporation of group V elements in gas-source molecular beam epitaxy of GaxIn1-xAsyP1-y with x ≈ 0.15 and y ≈ 0.33
- 30 September 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 123 (1-2) , 133-140
- https://doi.org/10.1016/0022-0248(92)90018-e
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxyJournal of Crystal Growth, 1992
- Composition control of GaAsP grown by molecular beam epitaxyJournal of Crystal Growth, 1991
- High quality InP and In1−xGaxAsyP1−y grown by gas source MBEJournal of Crystal Growth, 1991
- Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloysJournal of Crystal Growth, 1991
- Thermodynamic analysis of molecular beam epitaxy of III–V semiconductorsJournal of Crystal Growth, 1986
- Gas source molecular beam epitaxy of GaxIn1−xPyAs1−yJournal of Applied Physics, 1984
- Structural properties and composition control of GaAsyP1−y grown by MBE on VPE GaAs0.63P0.37 substratesJournal of Crystal Growth, 1982
- Composition effects in the growth of Ga(In)AsyP1-y alloys by MBEJournal of Crystal Growth, 1980
- Molecular Beam Epitaxy of GaP and GaAs1-xPxJapanese Journal of Applied Physics, 1976
- GaAs, GaP, and GaAs[sub x]P[sub 1−x] Epitaxial Films Grown by Molecular Beam DepositionJournal of Vacuum Science and Technology, 1969