On the Hydrogen Content of Commercial Silicon Wafers
- 1 November 1988
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 135 (11) , 2867-2869
- https://doi.org/10.1149/1.2095449
Abstract
We have characterized a series of commercially available p‐type silicon wafers using Schottky barrier capacitance voltage and spreading resistance measurements. A high resistivity near surface (∼1 μm) region is systematically observed, which can be annealed out by heating the material above ∼200°C. Hydrogen neutralization of boron acceptors has been identified as the cause of this phenomenon. Atomic hydrogen is believed to be incorporated in the material during polishing.Keywords
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