Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

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Abstract
We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental band gap but only weakly at the split-off band gap, in agreement with the theory of the Franz–Keldysh effect.

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