p-n-p-n switching performance of n-p-n transistors in integrated circuits

1 April 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 63 (4) , 723-724
https://doi.org/10.1109/PROC.1975.9812

Abstract

Some n-p-n transistors in integrated circuits show switching performance above a collector current. This is explained in this letter as p-n-p-n switching performance induced by minority carrier injection from a Schottky-barrier contact which is formed accidentally at a part of the periphery of collector metallization contact through the mask alignment process.

Keywords

SWITCHING CIRCUITS
IMPEDANCE
LATTICES
NOISE REDUCTION
ADMITTANCE
WIDEBAND
INSERTION LOSS
ARM
NETWORK SYNTHESIS
FREQUENCY

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