Ohmic Contacts to Silicon Carbide
- 1 February 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (2) , 771-773
- https://doi.org/10.1063/1.1658746
Abstract
We have studied a number of metal alloys in a search for improved ohmic contacts to SiC. A Cu–Ti eutectic alloy wets SiC at 880°C forming a shallow contact which is ohmic on p‐type SiC. An Al–Si eutectic wets SiC at 900° to 1000°C giving a contact which is ohmic on p‐type SiC; the penetration is 300 to 500 Å.This publication has 2 references indexed in Scilit:
- The etching of -silicon carbideBritish Journal of Applied Physics, 1967
- Electrical Contacts to Silicon CarbideJournal of Applied Physics, 1958