The non-radiative decay of free excitons as mediated by ionized donors in semiconductors
- 14 October 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (19) , 3627-3631
- https://doi.org/10.1088/0022-3719/9/19/015
Abstract
The probability of free-exciton decay in the presence of an ionized donor in a crystal, which leads to the neutralization of the ionized donor and the creation of a free hole, is suggested to be of the order of 0.5*10-5nd+ cm-3 s-1 in Si and GaP, and 0.2*10-4nd+ cm-3 s-1 in Ge, where nd+ is the concentration of ionized donors. These results are derived by means of a modification of a theory by Trlifaj, the limitations of which are pointed out.Keywords
This publication has 3 references indexed in Scilit:
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Non-radiative decay of excitons on ionized donors and acceptors in semi-conducting and dielectric crystalsCzechoslovak Journal of Physics, 1965
- Effective mass approximation for excitonsJournal of Physics and Chemistry of Solids, 1956