InAlAs/InGaAs heterojunction bipolar transistors with AIAs etch-stop layer
- 16 July 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (15) , 1388-1390
- https://doi.org/10.1049/el:19920883
Abstract
A seven monolayer AlAs layer was used as an etch stop at the emitter–base heterojunction of an Npn In0.52Al0.48As/In0.53Ga0.47As HBT. The etch-stop HBTs displayed higher DC gain and similar microwave performance when compared to devices without the AlAs layer.Keywords
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