Quantitative Structural Determination of Metallic Film Growth on a Semiconductor Crystal:Pb on Ge(111)
- 30 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (5) , 559-562
- https://doi.org/10.1103/physrevlett.62.559
Abstract
Step-by-step structural information has been obtained for the growth of a metallic film on a semiconductor substrate: Pb/Ge(111). Complete three-dimensional atomic coordinates have been determined for each equilibrium phase formed in the growth process, from submonolayer to multilayer coverages. The quantitative structural model explains for the first time the observed 30° rotation in the overlayer basis vectors of the 1×1 multilayer epitaxial Pb film from those of the two low-coverage phases.Keywords
This publication has 14 references indexed in Scilit:
- Atomic geometry of Si(111) 7×7 by dynamical low-energy electron diffractionPhysics Letters A, 1988
- Low-energy electron diffraction analysis of the Si(111)7×7 structureJournal of Vacuum Science & Technology A, 1988
- A LEED study of the structure of epitaxial Pb/Ge(111) monolayers and ultra-thin filmsSurface Science, 1988
- Adsorbate registry and subsurface relaxation of the reconstructionsSurface Science, 1987
- Ge(111) : The atomic geometrySurface Science, 1986
- Formation of a metal/semiconductor interface under thermodynamic equilibrium: Pb/Ge(111)Surface Science, 1985
- Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111)Surface Science, 1983
- Formation of two-dimensional solid and liquid Pb on Ge(1 1 1) surfacesSolid State Communications, 1983
- Surface Crystallography by LEEDPublished by Springer Nature ,1979
- Surface structure refinements of 2HMoS2, 2HNbSe2 and W(100)p(2 × 1)O via new reliability factors for surface crystallographySurface Science, 1977