Low Resistivity Thin Film Refractory Silicides Grown in Ultrahigh Vacuum at Low Temperature
Open Access
- 1 October 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (10) , 2426-2430
- https://doi.org/10.1149/1.2115309
Abstract
Refractory metal silicides, and , have been grown successfully on (100) silicon wafers in ultrahigh vacuum. It is demonstrated that an MBE‐like growth technique, i.e., metal evaporation on a clean heated monocrystal, yields device‐worthy thin film silicides of excellent electrical conductivity. For silicide films from 50 to 150 nm thick and substrate temperatures ranging from 750° to 900°C, resistivities as low as 65 μΩ cm for and 30 μΩ cm for are obtained. Similar resistivities for cosputtered silicides would require films 200–500 nm thick annealed at 1100°C for 30 min.Keywords
This publication has 0 references indexed in Scilit: