High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
- 12 June 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (24) , 3328-3330
- https://doi.org/10.1063/1.113746
Abstract
Magnetron reactive ion etching of GaN in BCl3 plasmas was investigated as a function of cathode power density, flow rate, and pressure. GaN etch rates were achieved (350 nm/min), which were twice the highest etch rate previously reported, and at low cathode bias voltages (<100 V). Auger electron spectroscopy measurements revealed the etched surfaces to be Ga deficient to a depth of 10 nm, with a surface chlorine residue of <1 at. %. Magnetron dry etching appears well suited to applications such as mesa definitions for photonic devices in the GaN materials system.Keywords
This publication has 0 references indexed in Scilit: