Si(111)-(4×1)In surface reconstruction studied by impact-collision ion-scattering spectrometry

Publisher Website
Google Scholar
Abstract
The technique of impact-collision ion-scattering spectrometry (ICISS) was used to study the 4×1 reconstruction of In on the Si(111) surface. The top layer of adatoms is arranged in double-row ridges, with three equivalent orientations running in 〈1¯10〉 directions. Several models have been simulated for both 1/2-monolayer (ML) and 1-ML coverage of the surface. Our ICISS polar-angle scans do not agree with models containing substitutional In in the first Si layer. Instead, a 1/2-ML model with In adatoms sitting in inequivalent sites provides the closest agreement with experiment. The vertical displacement between the In adatoms and the first Si layer has been determined experimentally to be 1.15±0.15 Å.