Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots
- 12 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (2) , 214-216
- https://doi.org/10.1063/1.120689
Abstract
Data are presented on the electroluminescence from an ensemble of self-organized quantum dots excited at low current densities. The ensemble contains ∼105 dots, which produce a ground state spectral emission with a 14 K linewidth of ∼1 meV at low current density (∼5×10−2 A/cm2). While the spectra show clearly discrete energy levels, we suggest that obtaining a single ground state emission from the ensemble may be due to interdot electronic coupling. Spectral broadening decreases for decreasing current density due to electronic state filling, even for the lowest current densities studied.Keywords
This publication has 11 references indexed in Scilit:
- Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structuresApplied Physics Letters, 1997
- Low-threshold continuous-wave operation of an oxide-confinedvertical cavity surface emitting laser based on a quantumdot active region and half-wave cavityElectronics Letters, 1997
- Quantum dot vertical-cavity surface-emitting laser with a dielectric apertureApplied Physics Letters, 1997
- Excited states of individual quantum dots studied by photoluminescence spectroscopyApplied Physics Letters, 1996
- Microscopic excitation spectroscopy for zero-dimensional quantized states of individual As/As quantum dotsPhysical Review B, 1996
- Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneckApplied Physics Letters, 1996
- Ultranarrow Luminescence Lines from Single Quantum DotsPhysical Review Letters, 1995
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gainIEEE Journal of Quantum Electronics, 1988