The Necessity of RTCVD in Advanced Epitaxial Growth of Si and SiGe
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technologyIEEE Transactions on Electron Devices, 1994
- Pattern sensitivity of selective Si1−xGex chemical vapor deposition: Pressure dependenceJournal of Applied Physics, 1993
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987
- Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface OptimizationJournal of the Electrochemical Society, 1986
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985
- Interaction of H 2 O with Si(111) and (100): Critical Conditions for the Growth ofJournal of the Electrochemical Society, 1984
- Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2Journal of the Electrochemical Society, 1982