Hartree Approximation for the Electronic Structure of a p-Channel Inversion Layer of Silicon M. O. S.
Open Access
- 1 March 1975
- journal article
- Published by Oxford University Press (OUP) in Progress of Theoretical Physics Supplement
- Vol. 57, 164-175
- https://doi.org/10.1143/ptp.57.164
Abstract
Self-consistent results of calculation for the electronic structures of a p-channel inversion layer on an n-type silicon are presented. The structure of the sub-bands and the cyclotron mass are calculated within the effective mass approximation which takes the six valence bands belonging to Г8+ and Г7+ into consideration.This publication has 18 references indexed in Scilit:
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