Effects of random MOSFET parameter fluctuations on total power consumption
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 233-236
- https://doi.org/10.1109/lpe.1996.547514
Abstract
No abstract availableKeywords
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- Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltageIEEE Transactions on Electron Devices, 1992
- The effect of randomness in the distribution of impurity atoms on FET thresholdsApplied Physics A, 1975