A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques. IV. Additional confirmation of the induction period and nucleation mechanisms
- 1 June 1968
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 17 (150) , 1163-1167
- https://doi.org/10.1080/14786436808223193
Abstract
Epitaxial silicon films have been grown on (100) substrates by the pyrolysis of silane using the molecular beam method. For a given set of growth conditions an induction period, corresponding to removal of the residual surface oxide film as SiO, is required before growth centres form. When subsequently the growth conditions are abruptly changed without switching off the beam, it is found that no further induction period is required (i.e. the surface produced by the first stage is ‘clean') and that a second set of growth centres, commensurate with the new growth conditions, is formed. The conclusions of the previous paper (Joyce et al. 1967) are thus substantiated.Keywords
This publication has 4 references indexed in Scilit:
- Nucleation and Initial-Growth Behavior of Thin-Film DepositsJournal of Vacuum Science and Technology, 1967
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniquesPhilosophical Magazine, 1966
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methodsPhilosophical Magazine, 1966