Hydrogen passivation of the oxygen-related thermal-donor defect in silicon
- 17 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (11) , 709-711
- https://doi.org/10.1063/1.96697
Abstract
It is demonstrated with both spreading resistance measurements and deep level transient spectroscopy that hydrogenation neutralizes the oxygen-related thermal-donor defect in n-type silicon. Hydrogen neutralization of shallow-donor dopants (e.g., phosphorus) is also illustrated. A model which accounts for shallow-donor passivation is applied to explain the interaction between hydrogen and thermal donors.Keywords
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