SAW Properties of PLZT Epitaxial Thin Films
- 1 January 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (S1)
- https://doi.org/10.7567/jjaps.24s1.121
Abstract
Thin films of PLZT with (111) orientation were epitaxially grown on c-plane of sapphire by rf-magnetron sputtering. The poling treatment was carried out under an applied field along direction of PLZT and SAW was excited along the same direction by an interdigital transducer. The coupling constant k 2 was about 0.85% for the fundamental mode of SAW at normalized thickness K d=0.42. The result indicates that the piezoelectric effect of the present PLZT thin film is as strong as BaTiO3.Keywords
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