Basic Condition for the Pair Diffusion Model of Group V Impurities in Silicon

• 1 January 1993
• journal article
• Published by Trans Tech Publications, Ltd. in Defect and Diffusion Forum
• Vol. 95-98, 955-960
• https://doi.org/10.4028/www.scientific.net/ddf.95-98.955

Abstract

Keywords

• DIFFUSION IN SILICON
• E-CENTRE
• GROUP V IMPURITIY
• PAIR DIFFUSION MODEL
• PHOSPHORUS ATOM
• SELF-INTERSTITIAL
• VACANCY