Ultrahigh Speed Photodetectors
- 28 November 1983
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0439, 178-182
- https://doi.org/10.1117/12.966093
Abstract
Ultrahigh speed photodiodes with -3dB frequency roll-off in excess of 100 GHz or equivalently in the time domain an impulse response with a full width half maximum (FWHM) of 5.4 psec have been developed and characterzed. These 100 GHz photodiodes have a planar configuration fabricated on n on n+ GaAs expitaxial layers on semi-insulating GaAs substrates which together with proton bombardment, have kept parasitic capacitances to ≤15 femto farads. The planar structure photodiode also lends itself easily to monolighic integration with a MESFET. The device operates at a reverse bias of -4 volts.Keywords
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